note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0043e doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / 2n50 15 __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package /39 = to-39 /5 = to-5 family / voltage 1000v 2N5015 0.5 amp, 1000 volts npn transistor features: ? bvcer 1000 volts ? low saturation voltage ? low leakage at high temperature ? high gain, low saturation ? 200 c operating, gold eutectic die attach ? tx, txv, and s-level screening available maximum ratings symbol value units collector ? emitter voltage (r be = 1 k ? ) v cer 1000 v collector ? base voltage v cbo 1000 v emitter ? base voltage v ebo 5 v collector ? emitter breakdown voltage bv ceo 450 v peak collector current i c 0.5 a peak base current i b 250 ma total device dissipation @ t c = 100o c derate above 100o c p d 2.0 20 w mw/oc operating and storage temperature t op , t stg -65 to +200 oc thermal resistance, junction to case r jc 50 (typ 22) oc/w notes: to-39 to-5 1 / for ordering information, price, operating curves, and availability - contact factory. 2 / screening based on mil-prf-19500. sc reening flows available on request. 3 / unless otherwise specified, maximum rati ngs/electrical characteristics at 25c. 4 / pulse test: pulse width = 300 s, duty cycle = 2%
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0043e doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2N5015 case outline: to-39 pin 1: emitter pin 2: base pin 3: collector case outline: to-5 pin 1: emitter pin 2: base pin 3: collector electrical characteristic 3 / symbol min typ max units collector ? emitter breakdown voltage (i c = 200 a dc , r be = 1 k ? ) bv cer 1000 1300 ?? v collector?base breakdown voltage (i c = 200 a dc ) bv cbo 1000 - ?? v emitter?base breakdown voltage (i e = 50 a dc ) bv ebo 5 7 ?? v collector cutoff current (v cb = 760 v) (v cb = 760 v, t c = 100c) i cbo ?? ?? 0.08 6 12 100 adc emitter cutoff current (v eb = 4v) i ebo ? 0.003 20 a dc current gain 4 / (i c = 5 ma dc , v ce = 10 v dc ) (i c = 20 ma dc , v ce = 10 v dc ) h fe 10 30 70 80 180 ?? collector ? emitter saturation voltage 4 / (i c = 20 ma dc , i b = 5 ma dc ) v ce(sat) ?? 0.07 1.8 vdc base ? emitter saturation voltage 4 / (i c = 20 ma dc , i b = 5 ma dc ) v be(sat) ?? 0.7 1.0 vdc current gain bandwidth product (i c = 20 ma dc , v ce = 10 v dc , f = 20 mhz) f t 20 25 ?? mhz output capacitance (v cb = 10 v dc , i e = 0 a dc , f = 1.0 mhz) cob ?? 12.5 30 pf delay time v cc = 125 v dc , rise time i c = 100 ma dc , storage time i b1 = 20 ma dc fall time i b2 = 20 ma dc pw= 2 us td tr ts tf ?? ?? ?? ?? 50 100 1500 450 200 1200 3000 800 nsec
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